Title :
The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
Author :
Sanabria, Chris ; Chakraborty, Arpan ; Xu, Hongtao ; Rodwell, Mark J. ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; gate leakage; high electron mobility transistor; noise figure; van der Ziel model; Aluminum gallium nitride; Gallium nitride; Gate leakage; HEMTs; MESFETs; MODFETs; Noise figure; Noise measurement; Predictive models; Size measurement; AlGaN; GaN; gate leakage; high electron mobility transistor (HEMT); noise figure; van der Ziel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.860889
