The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Author

Sanabria, Chris ; Chakraborty, Arpan ; Xu, Hongtao ; Rodwell, Mark J. ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

27

Issue

1

fYear

2006

Firstpage

19

Lastpage

21

Abstract

The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; gate leakage; high electron mobility transistor; noise figure; van der Ziel model; Aluminum gallium nitride; Gallium nitride; Gate leakage; HEMTs; MESFETs; MODFETs; Noise figure; Noise measurement; Predictive models; Size measurement; AlGaN; GaN; gate leakage; high electron mobility transistor (HEMT); noise figure; van der Ziel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.860889

Filename

1561442