Title :
Improving Current Controllability in Bi-Mode Gate Commutated Thyristors
Author :
Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Nistor, Iulian ; Vobecky, Jan ; Rahimo, Munaf
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.
Keywords :
semiconductor device models; thyristors; 2D mixed mode model; bimode gate commutated thyristors; current controllability; full wafer device simulations; reverse conducting gate commutated thyristor; Anodes; Cathodes; Integrated circuit modeling; Logic gates; Semiconductor device modeling; Semiconductor diodes; Thyristors; Full wafer modeling; gate commutated thyristor (GCT); maximum controllable current (MCC); safe operating area; thyristor; thyristor.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2428994
