Title :
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
Author :
Chih-Feng Huang ; Bing-Yue Tsui
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A thin active layer, a fully silicided source/drain (S/D), a modified Schottky-barrier, a high dielectric constant (high-/spl kappa/) gate dielectric, and a metal gate are integrated to realize high-performance thin-film transistors (TFTs). Devices with 0.1-μm gate length were fabricated successfully. Low threshold voltage, low subthreshold swing, high transconductance, low S/D resistance, high on/off current ratio, and negligible threshold voltage rolloff are demonstrated. It is thus suggested for the first time that the short-channel modified Schottky-barrier TFT is a solution to carrier out three-dimension integrated circuits and system-on-panel.
Keywords :
Schottky barriers; Schottky gate field effect transistors; dielectric materials; elemental semiconductors; low-power electronics; silicon; thin film transistors; 0.1 micron; 3D integrated circuits; fully silicided source/drain; high dielectric constant gate dielectrics; modified Schottky-barrier drain; modified Schottky-barrier source; short channel metal-gate thin film transistors; short-channel modified Schottky-barrier thin film transistors; system-on-panel; Annealing; Crystallization; Dielectrics; Hafnium oxide; MOSFETs; Silicides; Temperature; Thin film transistors; Threshold voltage; Transconductance; Schottky-barrier (SB); Thin-film transistor (TFT); silicide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.860378
