Short-channel metal-gate TFTs with modified Schottky-barrier source/drain

Author

Chih-Feng Huang ; Bing-Yue Tsui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

1

fYear

2006

Firstpage

43

Lastpage

45

Abstract

A thin active layer, a fully silicided source/drain (S/D), a modified Schottky-barrier, a high dielectric constant (high-/spl kappa/) gate dielectric, and a metal gate are integrated to realize high-performance thin-film transistors (TFTs). Devices with 0.1-μm gate length were fabricated successfully. Low threshold voltage, low subthreshold swing, high transconductance, low S/D resistance, high on/off current ratio, and negligible threshold voltage rolloff are demonstrated. It is thus suggested for the first time that the short-channel modified Schottky-barrier TFT is a solution to carrier out three-dimension integrated circuits and system-on-panel.

Keywords

Schottky barriers; Schottky gate field effect transistors; dielectric materials; elemental semiconductors; low-power electronics; silicon; thin film transistors; 0.1 micron; 3D integrated circuits; fully silicided source/drain; high dielectric constant gate dielectrics; modified Schottky-barrier drain; modified Schottky-barrier source; short channel metal-gate thin film transistors; short-channel modified Schottky-barrier thin film transistors; system-on-panel; Annealing; Crystallization; Dielectrics; Hafnium oxide; MOSFETs; Silicides; Temperature; Thin film transistors; Threshold voltage; Transconductance; Schottky-barrier (SB); Thin-film transistor (TFT); silicide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.860378

Filename

1561450