Effect of substrate doping on the capacitance-Voltage characteristics of strained-silicon pMOSFETs

Author

Chandrasekaran, Karthik ; Zhou, Xing ; Chiah, Siau Ben ; Shangguan, Wangzuo ; See, Guan Huei ; Bera, Lakshmi K. ; Balasubramanian, N. ; Rustagi, Subash C.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Nanyang Avenue, Singapore

Volume

27

Issue

1

fYear

2006

Firstpage

62

Lastpage

64

Abstract

The effect of substrate doping on the capacitance-voltage characteristics of a surface-channel strained-silicon p-channel MOSFET has been studied to explain a measured anomalous behavior in which a "plateau" in the accumulation region was observed. It is found that this plateau is substrate doping dependent and it switches from a plateau on the inversion side to that on the accumulation side as the substrate doping increases. The physics behind this behavior has been explained by the one-dimensional Poisson solution and validated with numerical simulations and experimental data.

Keywords

MOSFET; Poisson equation; accumulation layers; inversion layers; semiconductor doping; silicon; substrates; Si; capacitance-voltage characteristics; one dimensional Poisson solution; strained-silicon p-channel MOSFET device; substrate doping effect; surface-channel MOSFET; Capacitance measurement; Capacitance-voltage characteristics; Carrier confinement; Doping; Germanium silicon alloys; Interface states; MOSFET circuits; Numerical simulation; Silicon germanium; Substrates; Capacitance–voltage (C–V) characteristics; strained-silicon (s-Si); substrate doping; surface-channel MOSFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.860886

Filename

1561456