A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design

Author

Salcedo, Javier A. ; Liou, Juin J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

27

Issue

1

fYear

2006

Firstpage

65

Lastpage

67

Abstract

A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions.

Keywords

electrostatic discharge; p-n junctions; protection; semiconductor devices; ESD protection design; asymmetrical S type current-voltage characteristics; blocking junction configurations; dual-polarity conduction; dual-polarity device; electrostatic discharge; mixed-signal integrated circuits; symmetrical S type current-voltage characteristics; Biological system modeling; Electrodes; Electrostatic discharge; Equivalent circuits; Integrated circuit interconnections; Mixed analog digital integrated circuits; Protection; Rails; Thyristors; Voltage; Charge-pump ICs; S-type; dual-polarity conduction; electrostatic discharge (ESD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.861601

Filename

1561457