Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: experiment and modeling

Author

Xu, M.L. ; Tan, G.L. ; Xu, J.M. ; Irikawa, M. ; Shimizu, H. ; Fukushima, T. ; Hirayama, Y. ; Mand, R.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

7

Issue

9

fYear

1995

Firstpage

947

Lastpage

949

Abstract

A high differential gain of 9.3×10/sup -16/ cm² is obtained in GaInAs-AlGaInAs 1.55-μm multiquantum-well lasers with 1% compressive strain grown by molecular-beam epitaxy. This is the highest ever achieved in this material system. The model-solid theory and an approximate k.p method are incorporated in the theoretical gain calculation that provides a detailed understanding of the experimental results and guidance to further improvement.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; k.p calculations; laser theory; molecular beam epitaxial growth; quantum well lasers; semiconductor device models; 1.55 mum; GaInAs-AlGaInAs; GaInAs-AlGaInAs quantum wells; compressive strain; gain calculation; k.p method; model-solid theory; molecular-beam epitaxy; multiquantum-well lasers; ultra-high differential gain; Capacitive sensors; Frequency; Laser modes; Laser theory; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Semiconductor process modeling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414664

Filename

414664