DocumentCode
765738
Title
Study on the dual frequency capacitively coupled plasmas by the particle-in-cell/Monte Carlo method
Author
Wakayama, Go ; Nanbu, Kenichi
Author_Institution
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
Volume
31
Issue
4
fYear
2003
Firstpage
638
Lastpage
644
Abstract
The dynamic structure of dual frequency (2/60 MHz) capacitively coupled plasmas (CCPs) in Ar (25 mtorr) are examined using the self-consistent particle-in-cell/Monte Carlo (PIC/MC) simulation. At first, the dependence of the discharge structure on wafer biasing conditions were investigated using one-dimensional computation. The results show that the plasma potential oscillates with the high frequency superposed on the low frequency. The amplitude of the high-frequency oscillation is modulated by the instantaneous potential of the low frequency biasing electrode. Furthermore, the axisymmetrical two-dimensional PIC/MC simulation is performed to investigate the influence of a geometric configuration of the reactor on the plasma structure.
Keywords
Monte Carlo methods; high-frequency discharges; plasma diagnostics; plasma simulation; 2 MHz; 25 mtorr; 60 MHz; dual frequency capacitively coupled plasmas; dynamic structure; geometric configuration; instantaneous potential; ion-energy distribution; low frequency biasing electrode; one-dimensional computation; oscillation amplitude modulation; particle modeling; particle-in-cell/Monte Carlo method; plasma potential oscillation; plasma structure; processing plasma; reactor; self-consistent PIC MC simulation; superposed high-frequency oscillation; wafer biasing conditions; Argon; Computational modeling; Etching; Frequency; Plasma applications; Plasma density; Plasma materials processing; Plasma properties; Plasma simulation; Plasma sources;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2003.815471
Filename
1221843
Link To Document