DocumentCode :
765766
Title :
The Effect of GePt Underlayer on the 
Ordering FePt Thin Films
Ordering FePt Thin FilmsAuthor :
Hsu, C.J. ; Tsai, J.L. ; Hsu, C.W. ; Chen, S.K. ; Chang, W.C.
Author_Institution :
Dept. of Mater. Eng., Nat. Chung-Hsing Univ., Taichung
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2900
Lastpage :
2902
Abstract :
We have explored the effect of GePt underlayer deposition temperature on L10 ordered FePt films. As the deposition temperature of GePt increased from room temperature (RT) to 800degC, the coercively (Hc) of the (GePt/FePt) bilayer increased from 1.1 to 9.1 kOe, which indicated the Ge2Pt3 phase formed at higher deposition temperature and promoted the L10 ordered FePt phase formation. Under the similar process, the single layer FePt coercively was 6.9 kOe. The interlayer diffusion between GePt and FePt cannot be avoided when the GePt underlayer deposited at RT. An interesting island-like microstructure was observed when GePt underlayer deposited at higher temperature
Keywords :
coercive force; germanium alloys; iron alloys; magnetic thin films; 800 C; FePt; FePt thin films; GePt; GePt underlayer deposition temperature; coercively; interlayer diffusion; island-like microstructure; phase formation; room temperature; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Microstructure; Perpendicular magnetic anisotropy; Plasma temperature; Radio frequency; Sputtering; Transistors; Vibration measurement; Coercivity;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.879965
Filename :
1704476
Link To Document :
