Very-low-threshold index-confined planar microcavity lasers

Author

Deppe, D.G. ; Huffaker, D.L. ; Shin, J. ; Deng, Q.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

7

Issue

9

fYear

1995

Firstpage

965

Lastpage

967

Abstract

A fabrication process for laterally index-confined planar microcavity lasers is given that results in continuous-wave thresholds as low as 59 μA for a properly tuned cavity (T=250 K). Characterization of the spontaneous emission mode shows that the lateral confinement, when reduced to the mode size expected for the planar cavity, appears to increase the spontaneous emission coupling to the lasing mode.

Keywords

distributed Bragg reflector lasers; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; spontaneous emission; 250 K; 59 muA; AlAs-GaAs; CaF-ZnSe; DBR; InGaAs; continuous-wave thresholds; fabrication process; lasing mode; lateral confinement; laterally index-confined planar microcavity lasers; mode size; planar cavity; properly tuned cavity; spontaneous emission coupling; spontaneous emission mode; very-low-threshold index-confined planar microcavity lasers; Current measurement; Laser modes; Laser tuning; Microcavities; Optical coupling; Optical microscopy; Oxidation; Propagation losses; Size measurement; Spontaneous emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414670

Filename

414670