Submilliamp vertical-cavity surface-emitting lasers with buried lateral-current confinement

Author

Rochus, S. ; Hauser, M. ; Rohr, T. ; Kratzer, H. ; Bohm, G. ; Klein, W. ; Trankle, Gunther ; Weimann, G.

Author_Institution

Walter-Schottky-Inst., Tech. Univ. Munchen, Germany

Volume

7

Issue

9

fYear

1995

Firstpage

968

Lastpage

970

Abstract

Lateral current confinement of intracavity contacted 0.98 μm vertical cavity surface emitting lasers has been achieved by inserting a 50 nm thick n-type GaAs current blocking layer into the p-doped cladding. Epitaxial regrowth by solid source MBE is used to bury the current confining layer in the cavities. Threshold currents of 0.78 mA, optical output powers of 1 mW and external quantum efficiencies of up to 15% are measured. The lateral current injection via the top p-type cladding leads to low voltages at threshold of 1.78 V.

Keywords

distributed Bragg reflector lasers; laser cavity resonators; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; surface emitting lasers; 0.78 mA; 0.98 mum; 1 mW; 1.78 V; 15 percent; 50 nm; 6 mum; GaAs; buried lateral-current confinement; current confining layer; epitaxial regrowth; external quantum efficiencies; intracavity contact; lateral current injection; low voltages; n-type GaAs current blocking layer; optical output powers; p-doped cladding; solid source MBE; submilliamp vertical-cavity surface-emitting lasers; threshold; threshold currents; top p-type cladding; Current measurement; Gallium arsenide; Low voltage; Molecular beam epitaxial growth; Power generation; Solids; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414671

Filename

414671