Accurate molecular beam epitaxial growth of vertical-cavity surface-emitting laser using diode laser reflectometry

Author

Li, G.S. ; Yuen, W. ; Toh, K. ; Eng, L.E. ; Lim, S.F. ; Chang-Hasnain, C.J.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

7

Issue

9

fYear

1995

Firstpage

971

Lastpage

973

Abstract

Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical-cavity surface-emitting lasers (VCSELs) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system. Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures. Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.<>

Keywords

calibration; distributed Bragg reflector lasers; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; reflectometry; semiconductor growth; surface emitting lasers; thickness measurement; DBR mirrors; VCSEL; VCSEL wafers; accurate molecular beam epitaxial growth; diode laser reflectometry; growth accuracy; low threshold continuous wave room temperature operation; pre-growth calibration system; quantum wells; reproducible MBE growth; vertical-cavity structures; vertical-cavity surface-emitting laser; Calibration; Chemical lasers; Diode lasers; Molecular beam epitaxial growth; Optical feedback; Optical interferometry; Optical surface waves; Reflectometry; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414672

Filename

414672