Title :
Accurate molecular beam epitaxial growth of vertical-cavity surface-emitting laser using diode laser reflectometry
Author :
Li, G.S. ; Yuen, W. ; Toh, K. ; Eng, L.E. ; Lim, S.F. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical-cavity surface-emitting lasers (VCSELs) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system. Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures. Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.<>
Keywords :
calibration; distributed Bragg reflector lasers; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; reflectometry; semiconductor growth; surface emitting lasers; thickness measurement; DBR mirrors; VCSEL; VCSEL wafers; accurate molecular beam epitaxial growth; diode laser reflectometry; growth accuracy; low threshold continuous wave room temperature operation; pre-growth calibration system; quantum wells; reproducible MBE growth; vertical-cavity structures; vertical-cavity surface-emitting laser; Calibration; Chemical lasers; Diode lasers; Molecular beam epitaxial growth; Optical feedback; Optical interferometry; Optical surface waves; Reflectometry; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
