A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence

Author

Yoon, H. ; Gutierrez-Aitken, A.L. ; Jambunathan, R. ; Singh, J. ; Bhattacharya, P.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

7

Issue

9

fYear

1995

Firstpage

974

Lastpage

976

Abstract

We have measured the Auger recombination rates in an InP-based quantum well tunneling injection laser from large signal modulation experiments. Measured values of the Auger coefficient, C/sub o/=1.2/spl plusmn/0.6/spl times/10/sup -29/ cm/sup 6/ s/sup -1/ at 283 K, are a factor of over 10/sup 2/ smaller than those measured in similar multiple quantum well separate confinement heterostructure lasers. In effect, the tunneling injection mechanism keeps the carriers "cold" even at high injection levels. A maximum value of T/sub o/=70 K is measured in the tunneling injection laser compared to 50 K for conventional quantum well structures,.<>

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; indium compounds; optical modulation; quantum well lasers; tunnelling; 283 K; 50 K; 70 K; Auger coefficient; Auger recombination; Auger recombination rates; InP; InP-based tunneling injection laser; cold carriers; high injection levels; large signal modulation experiments; quantum well tunneling injection laser; temperature dependence; tunneling injection mechanism; Chemical lasers; Laser theory; Pulse measurements; Pump lasers; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Tunneling; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414673

Filename

414673