• DocumentCode
    765901
  • Title

    The Incident Angle Effect of Al Adatom on the Growth Morphology of Al/Ni

  • Author

    Soon-Gun Lee ; Yong-Chae Chung

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul
  • Volume
    42
  • Issue
    10
  • fYear
    2006
  • Firstpage
    2939
  • Lastpage
    2941
  • Abstract
    The morphology of Al thin-film growth on an Ni(001) substrate according to the variation incident energy of adatoms was investigated by molecular dynamics simulation. Al atoms apparently favored the layer-by-layer growth mode at a low incident angle. The growth mode of Al film was, however, changed to follow the island growth mode according to the increasing adatom incident angle. Interestingly, the steering effect due to atomic attraction, which results in rougher surface, was significantly observed. The steering effect was quantitatively investigated through the extensive measurement of the trajectory with the variation of incident energy and incident angle near the artificially structured Al step positioned on the Ni surface
  • Keywords
    aluminium; epitaxial growth; magnetic thin films; molecular dynamics method; nickel; surface morphology; Al adatom incident angle; Al thin-film growth; Al-Ni; Ni surface; artificial structured Al; atomic attraction; growth morphology; incident angle effect; layer-by-layer growth mode; molecular dynamics simulation; rough surface; steering effect; Atomic layer deposition; Magnetic films; Materials science and technology; Rough surfaces; Sputtering; Substrates; Surface morphology; Surface roughness; Temperature; Thin film devices; Al/Ni(001); growth morphology; molecular dynamics simulation; steering effect;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.878412
  • Filename
    1704489