Title :
DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique
Author :
Tanbun-Ek, T. ; Sciortino, P.F., Jr. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.<>
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical fabrication; phase modulation; photolithography; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; DFB lasers; InGaAsP quantum well lasers; Mach-Zehnder optical modulator; Y-branches; infrared near field imaging technique; modulation depth; monolithically integrated; phase modulator; photolithographically defined dielectric mask; power divider; selective area growth; selective area growth MOVPE technique; selective area low pressure MOVPE growth; Dielectrics; Epitaxial growth; Epitaxial layers; Infrared imaging; Integrated optics; Optical imaging; Optical interferometry; Optical modulation; Phase modulation; Power dividers;
Journal_Title :
Photonics Technology Letters, IEEE
