• DocumentCode
    766071
  • Title

    Relation Between Microwave Complex Permeability and Ferromagnetic Fe-Si Layer Thickness in Mn-Ir/Fe-Si Exchange-Coupled Film

  • Author

    Sonehara, Makoto ; Sugiyama, Takatoshi ; Ishikawa, Takuya ; Inagaki, Kei ; Sato, Toshiro ; Yamasawa, Kiyohito ; Miura, Yoshimasa

  • Author_Institution
    Fac. of Eng., Shinshu Univ., Nagano
  • Volume
    42
  • Issue
    10
  • fYear
    2006
  • Firstpage
    2984
  • Lastpage
    2986
  • Abstract
    Mn-Ir/Fe-Si exchange-coupled films with an Ru underlayer for high frequency applications were fabricated, and their microwave permeability was evaluated. Both exchange bias field and ferromagnetic resonance frequency increased with decreasing Fe-Si thickness. For example, Mn-Ir (10 nm)/Fe-Si (10 nm)/Ru (1 nm) exchange-coupled film deposited on SiO 2 had a static relative permeability of about 180 and a ferromagnetic resonance (FMR) frequency of about 4.3 GHz. The microwave properties such as permeability and FMR frequency can be controlled by changing Fe-Si thickness
  • Keywords
    ferromagnetic materials; ferromagnetic resonance; iridium alloys; iron alloys; magnetic permeability; manganese alloys; micromagnetics; ruthenium alloys; silicon alloys; FMR frequency; Mn-Ir-Fe-Si; Ru; Ru underlayer; SiO2; exchange-coupled film deposition; ferromagnetic layer thickness; ferromagnetic resonance frequency; high-frequency micromagnetic devices; microwave complex permeability; Anisotropic magnetoresistance; Iron; Magnetic fields; Magnetic films; Magnetic resonance; Microwave devices; Permeability; Radio frequency; Resonant frequency; Saturation magnetization; Exchange-coupling; Fe-Si; Mn-Ir; ferromagnetic resonance frequency; high-frequency micromagnetic devices;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.880970
  • Filename
    1704504