DocumentCode :
766071
Title :
Relation Between Microwave Complex Permeability and Ferromagnetic Fe-Si Layer Thickness in Mn-Ir/Fe-Si Exchange-Coupled Film
Author :
Sonehara, Makoto ; Sugiyama, Takatoshi ; Ishikawa, Takuya ; Inagaki, Kei ; Sato, Toshiro ; Yamasawa, Kiyohito ; Miura, Yoshimasa
Author_Institution :
Fac. of Eng., Shinshu Univ., Nagano
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2984
Lastpage :
2986
Abstract :
Mn-Ir/Fe-Si exchange-coupled films with an Ru underlayer for high frequency applications were fabricated, and their microwave permeability was evaluated. Both exchange bias field and ferromagnetic resonance frequency increased with decreasing Fe-Si thickness. For example, Mn-Ir (10 nm)/Fe-Si (10 nm)/Ru (1 nm) exchange-coupled film deposited on SiO 2 had a static relative permeability of about 180 and a ferromagnetic resonance (FMR) frequency of about 4.3 GHz. The microwave properties such as permeability and FMR frequency can be controlled by changing Fe-Si thickness
Keywords :
ferromagnetic materials; ferromagnetic resonance; iridium alloys; iron alloys; magnetic permeability; manganese alloys; micromagnetics; ruthenium alloys; silicon alloys; FMR frequency; Mn-Ir-Fe-Si; Ru; Ru underlayer; SiO2; exchange-coupled film deposition; ferromagnetic layer thickness; ferromagnetic resonance frequency; high-frequency micromagnetic devices; microwave complex permeability; Anisotropic magnetoresistance; Iron; Magnetic fields; Magnetic films; Magnetic resonance; Microwave devices; Permeability; Radio frequency; Resonant frequency; Saturation magnetization; Exchange-coupling; Fe-Si; Mn-Ir; ferromagnetic resonance frequency; high-frequency micromagnetic devices;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.880970
Filename :
1704504
Link To Document :
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