DocumentCode
766195
Title
Interfacial Effects of MgO Buffer Layer on Perpendicular Anisotropy of
FePt Films
Author
Lim, Byong Chan ; Chen, Jim S. ; Chow, G.M.
Author_Institution
Data Storage Inst., Nat. Univ. of Singapore
Volume
42
Issue
10
fYear
2006
Firstpage
3017
Lastpage
3019
Abstract
MgO buffer layer in FePt perpendicular media blocked diffusion from the CrRu underlayer and promoted epitaxial growth of the FePt L1 0 film. The MgO layer deposited at 50degC appeared continuous and the interface roughness between MgO and FePt decreased with increasing thickness up to 4 nm. The predominant FePt (001) texture slightly improved with increasing MgO thickness. At 350degC, deposited MgO (2-nm thickness) was discontinuous and island-like. For 8-nm-thick MgO, the FePt (001) dominated and FePt (111) almost disappeared. Defects such as grain boundaries, twin boundaries, and interface roughness contributed to the high coercivity as a result of high deposition temperature or small MgO thickness
Keywords
buffer layers; coercive force; epitaxial growth; interface roughness; perpendicular magnetic anisotropy; twin boundaries; 350 C; 50 C; CrRu; FePt; MgO; buffer layer; epitaxial growth; grain boundaries; high coercivity; interface roughness; interfacial effects; layer deposition; perpendicular anisotropy; perpendicular media blocked diffusion; twin boundaries; Anisotropic magnetoresistance; Buffer layers; Data engineering; Epitaxial growth; Magnetic materials; Materials science and technology; Reflection; Sputtering; Temperature; X-ray scattering; Buffer layer; FePt; MgO; interfacial effect;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2006.878402
Filename
1704515
Link To Document