Title :
Turn-off failures in individual and paralleled MCT´s
Author :
Afridi, Khurram K. ; Kassakian, John G.
Author_Institution :
Lab. for Electromagn. & Electron. Syst., MIT, Cambridge, MA, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated in which the slower of the two MCTs fails to turn off. This is caused by the increase in anode current through the slower device and the decrease in gate voltage rise-time due to the MCTs Miller capacitance
Keywords :
MIS devices; MOS-controlled thyristors; failure analysis; reliability theory; semiconductor device models; semiconductor device reliability; thyristors; MCT; MOS-controlled thyristors; Miller capacitance; anode current; differential failure mode; gate voltage rise-time; reliability modelling; turn-off current crowding; turn-off failure mode; Anodes; Capacitance; Commercialization; Failure analysis; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor switches; Proximity effect; Thyristors; Voltage control;
Journal_Title :
Power Electronics, IEEE Transactions on
