DocumentCode :
76647
Title :
Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector
Author :
Zhijuan Tu ; Zhiping Zhou ; Xingjun Wang
Author_Institution :
State Key Lab. of Adv. Opt. Commun. Syst. & Networks, Peking Univ., Beijing, China
Volume :
20
Issue :
4
fYear :
2014
fDate :
July-Aug. 2014
Firstpage :
50
Lastpage :
55
Abstract :
Dark current variations in the germanium waveguide photodetector were investigated. Contributing to the time dependent dark current variations, random telegraph noise (RTN) was observed and studied for the first time. The RTN at different reverse biases and temperatures were measured. By analyzing the capture and emission time constants, the single trap that was responsible for RTN was estimated to be around 18 nm from the interface between the N ++ and the intrinsic region. The trap energy levels at different reverse biases were also extracted and the trapping and detrapping dynamics were explained. Through this procedure, the single trap that may lead to device failure can be detected and characterized without destroying the well-fabricated devices.
Keywords :
dark conductivity; elemental semiconductors; germanium; photodetectors; semiconductor device noise; Ge; capture time constants; dark current; detrapping dynamics; emission time constants; germanium waveguide photodetector; random telegraph noise; reverse biases; trap energy levels; trapping dynamics; Current measurement; Dark current; Electron traps; Fluctuations; Optical waveguides; Photodetectors; Temperature measurement; Detectors; germanium; noise measurement; optoelectronic devices;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2288291
Filename :
6651755
Link To Document :
بازگشت