Cofabrication of Planar Gunn Diode and HEMT on InP Substrate

Author

Papageorgiou, V. ; Khalid, Amir ; Chong Li ; Cumming, David R. S.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

2779

Lastpage

2784

Abstract

We present the cofabrication of planar Gunn diodes and high-electron mobility transistors (HEMTs) on an indium phosphide substrate for the first time. Electron beam lithography has been used extensively for the complete fabrication procedure and a 70-nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (L_ac) down to 1and 120-μm width were shown to oscillate up to 204 GHz. The transistor presents a cutoff frequency ( f_T ) of 220 GHz, with power gain up to 330 GHz ( f_max). The integration of the two devices creates the potential for the realization of high-power, high-frequency MMIC Gunn oscillators, circuits, and systems.

Keywords

Gunn diodes; III-V semiconductors; electron beam lithography; high electron mobility transistors; indium compounds; millimetre wave diodes; millimetre wave transistors; HEMT; InP; T-gate technology; anode-to-cathode separation; electron beam lithography; frequency 204 GHz; frequency 220 GHz; high electron mobility transistors; high-frequency MMIC Gunn oscillators; planar Gunn diode; size 70 nm; Fabrication; HEMTs; Indium phosphide; Light emitting diodes; Oscillators; Semiconductor diodes; Substrates; Gunn diode; high-electron mobility transistor (HEMT); integration; mm-wave; mm-wave.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2331368

Filename

6847171