Title :
Highly scalable ballistic injection AND-type (BiAND) flash memory
Author :
Wu, Meng-Yi ; Dai, Sheng-Huei ; Hu, Shu-Fen ; Yang, Evans Ching-Sung ; Hsu, Charles Ching-Hsiang ; King, Ya-Chin
Author_Institution :
Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.
Keywords :
flash memories; logic gates; AND-type array; ballistic source side injection; flash memory; read current; Acceleration; Channel hot electron injection; Energy consumption; Flash memory; Hot carriers; Laboratories; Low voltage; Nonvolatile memory; Scalability; Split gate flash memory cells; AND-type array; Flash memory; ballistic; split-gate Flash;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.860636
