Title :
Material, device, and step independence of the quantized Hall resistance
Author :
Jeckelmann, B. ; Inglis, A.D. ; Jeanneret, B.
Author_Institution :
Swiss Federal Office of Metrol., Wabern, Switzerland
fDate :
4/1/1995 12:00:00 AM
Abstract :
We report comprehensive high-precision direct and indirect comparisons of quantized Hall resistances in MOSFET and GaAs heterostructures, for steps 1, 2, 3, 4, 6, and 8. We find no evidence for a step, sample-source, or material dependence of the quantized Hall resistance at the level of 3.5 parts in 1010
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; silicon; units (measurement); GaAs; GaAs heterostructures; Si; Si MOSFET; cryogenic current comparator; measurement standards; quantized Hall resistance; step independence; units; Electric resistance; Electrical resistance measurement; Electrons; Gallium arsenide; Hall effect; Helium; MOSFET circuits; Particle measurements; Silicon; Temperature;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
