Comments on "Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss"

Author

Woods, R.C. ; Boroumand, Farhad A.

Author_Institution

Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

53

Issue

1

fYear

2006

Firstpage

173

Lastpage

176

Abstract

In 2001, Lee et al. (see ibid., vol.48, no.5, p.524-9, May 2001) proposed the use of GaN layers as a suitable material for surface-acoustic wave devices. They calculated the electromechanical coupling factor (k²) for this material to be (4.3±0.3)%. We have repeated their experiments and report a significantly lower value of k²=(0.066±0.003)% for a film thickness of ∼0.1 times the acoustic wavelength.

Keywords

III-V semiconductors; gallium compounds; piezoelectric semiconductors; semiconductor epitaxial layers; surface acoustic wave filters; vapour phase epitaxial growth; wide band gap semiconductors; GaN; MOVPE; SAW filter; Smith chart; electromechanical coupling factor; epitaxial growth; high velocity; interdigital transducer; low insertion loss; surface-acoustic wave filter; thin-film; Acoustic devices; Acoustic materials; Gallium nitride; Insertion loss; Piezoelectric films; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Surface morphology; Transistors; Coupling constant; GaN; Smith chart; gallium nitride; interdigital transducers (IDTs); network analyzer; piezoelectricity; surface-acoustic wave (SAW);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.860657

Filename

1561563