A low-power Ku-band downconverter in InGaP-GaAs HBT technology

Author

Lee, Jeiyoung ; Shin, Hae-Young ; Park, C.H. ; Kim, N.Y.

Author_Institution

RFIC Center, Kwangwoon Univ., Seoul, South Korea

Volume

15

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

193

Lastpage

195

Abstract

We have developed a low-voltage, low-power Ku-band microwave monolithic integrated circuit (MMIC) downconverter using InGaP-GaAs heterojunction bipolar transistor technology. It consists of a preamplifier, a double-balanced mixer, and an L-band wideband intermediate-frequency (IF) amplifier. The downconverter achieves a conversion gain of 31 dB, with a gain flatness within ± 1 dB, and an output-referred 1-dB compression power (P_1dB,OUT) of +2.5dBm. This downconverter dissipates 33mA from a 3-V supply. We believe that the operating voltage and power consumption are lower than those of previously published Ku-band MMIC downconverters.

Keywords

III-V semiconductors; MMIC frequency convertors; MMIC mixers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; preamplifiers; wideband amplifiers; 3 V; 31 dB; 33 mA; InGaP-GaAs; Ku-band downconverters; L-band wideband amplifier; MMIC downconverters; conversion gain; double-balanced mixer; gain flatness; heterojunction bipolar transistor technology; intermediate-frequency amplifier; low-power electronics; microwave monolithic integrated circuit; Broadband amplifiers; Gain; Heterojunction bipolar transistors; Integrated circuit technology; L-band; MMICs; Microwave technology; Monolithic integrated circuits; Preamplifiers; Voltage; Downconverter; InGaP–GaAs heterojunction bipolar transistor (HBT); low power; microwave monolithic integrated circuit (MMIC);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.844197

Filename

1416925