A 20-50 GHz RF MEMS single-stub impedance tuner

Author

Vähä-Heikkilä, T. ; Varis, J. ; Tuovinen, J. ; Rebeiz, G.M.

Volume

15

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

205

Lastpage

207

Abstract

A novel radio-frequency (RF) microelectromechanical system (MEMS) single-stub impedance tuner has been developed. The design is based on combining the loaded line technique with the single-stub topology to obtain wide impedance coverage with high |Γ_MAX|. The tuner consist of ten switched MEMS capacitors producing 1024(2¹⁰) different impedances. The design has been optimized for noise parameter and load-pull measurements of active devices and shows excellent measured impedance coverage over the 20-50 GHz frequency range.

Keywords

impedance matching; micromechanical devices; radiofrequency integrated circuits; switched capacitor networks; tuning; 20 to 50 GHz; RF MEMS single-stub impedance tuner; active devices; load-pull measurements; loaded line technique; matching network; noise parameter; radio-frequency microelectromechanical system; switched MEMS capacitors; Capacitors; Frequency measurement; Impedance measurement; Microelectromechanical systems; Micromechanical devices; Noise measurement; Radio frequency; Radiofrequency microelectromechanical systems; Topology; Tuners; Impedance tuner; load-pull; matching network; multiband; noise parameters; radio-frequency (RF) microelectromechanical system (MEMS);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.845690

Filename

1416929