Title : 
Verification of on-wafer noise parameter measurements
         
        
            Author : 
Boudiaf, Ali ; Dubon-Chevallier, Chantal ; Pasquet, Daniel
         
        
            Author_Institution : 
EMO-ENSEA, Cergy Pontoise Cedey, France
         
        
        
        
        
            fDate : 
4/1/1995 12:00:00 AM
         
        
        
        
            Abstract : 
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth
         
        
            Keywords : 
electric noise measurement; microwave measurement; excess noise ratio; input-output reflection coefficients; low-noise field effect transistors; noise figure; noise parameter measurement; on-wafer noise parameter measurements; passive device; test instrumentation verification; thin film technology; Acoustic reflection; Bandwidth; Circuit noise; Electrical resistance measurement; FETs; Measurement standards; Noise figure; Noise measurement; Scattering parameters; Testing;
         
        
        
            Journal_Title : 
Instrumentation and Measurement, IEEE Transactions on