• DocumentCode
    766984
  • Title

    A 0.35-μm CMOS 2-GHz VCO in wafer-level package

  • Author

    Sang-Woong Yoon ; Pinel, S. ; Laskar, J.

  • Author_Institution
    Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    15
  • Issue
    4
  • fYear
    2005
  • fDate
    4/1/2005 12:00:00 AM
  • Firstpage
    229
  • Lastpage
    231
  • Abstract
    This letter presents a complementary metal oxide semiconductor (CMOS) voltage-controlled oscillator (VCO) with a high-Q inductor in a wafer-level package for the LC-resonator. The on-chip inductor is implemented using the redistribution metal layer of the wafer-level package (WLP), and therefore it is called a WLP inductor. Using the thick passivation and copper metallization, the WLP inductor has high quality-factor (Q-factor). A 2-nH inductor exhibits a Q-factor of 8 at 2 GHz. The center frequency of the VCO is 2.16 GHz with a tuning range of 385 MHz (18%). The minimum phase noise is measured to be -120.2 dBc/Hz at an offset frequency of 600 kHz. The dc power consumed by the VCO-core is 1.87 mW with a supply voltage of 1.7 V and a current of 1.1 mA. The output power with a 50-/spl Omega/ load is -12.5/spl plusmn/1.3 dBm throughout the whole tuning range. From the best of our knowledge, compared with recently published 2-GHz-band 0.35 μm CMOS VCOs in the literature, the VCO in this work shows the lowest power consumption and the best figure-of-merit.
  • Keywords
    CMOS integrated circuits; Q-factor; UHF oscillators; inductors; integrated circuit metallisation; integrated circuit packaging; passivation; phase noise; voltage-controlled oscillators; 0.35 micron; 1.1 mA; 1.7 V; 1.87 mW; 2 GHz; 2.16 GHz; 600 kHz; CMOS voltage controlled oscillator; LC resonator; Q-factor; VCO; WLP inductor; copper metallization; high-Q inductor; minimum phase noise; on-chip inductor; phase noise; quality-factor; redistribution metal layer; thick passivation; wafer level package; wafer level packaging; Copper; Frequency; Inductors; Metallization; Passivation; Q factor; Semiconductor device packaging; Tuning; Voltage-controlled oscillators; Wafer scale integration; Complementary metal oxide semiconductor (CMOS); inductor; quality-factor (Q-factor); voltage-controlled oscillator (VCO); wafer-level package (WLP);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2005.845699
  • Filename
    1416937