DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive Layers bombarded by H+ and Fe+ ions

This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H⁺ and Fe⁺ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 10⁸ Ωsq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment.