Title :
Temperature Dependence of Magnetotransport in Extraordinary Magnetoresistance Devices
Author :
Boone, T.D. ; Folks, L. ; Katine, J.A. ; Maat, S. ; Marinero, E. ; Nicoletti, S. ; Field, M. ; Sullivan, G.J. ; Ikhlassi, A. ; Brar, B. ; Gurney, B.A.
Author_Institution :
Hitachi Global Storage Technol., San Jose State Univ., CA
Abstract :
Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 muA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path
Keywords :
electron mean free path; galvanomagnetic effects; magnetoresistive devices; semiconductor devices; semiconductor junctions; thermal magnetoresistance; 300 K; 5 K; EMR; Lorentz force; current excitations; electromagnetic devices; extraordinary magnetoresistance devices; low resistance metallic contacts; magnetic fields; magnetic sensors; magnetotransport; nonmagnetic high mobility semiconductors; operating temperatures; semiconductor devices; semiconductor heterojunctions; temperature dependence; Contact resistance; Electrons; Extraordinary magnetoresistance; Lorentz covariance; Magnetic devices; Magnetic fields; Magnetic modulators; Magnetic semiconductors; Temperature dependence; Testing; Electromagnetic devices; extraordinary magnetoresistance; magnetic sensors; semiconductor devices; semiconductor heterojunctions;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.879149
