DocumentCode :
767219
Title :
Design of an original K-band active balun with improved broadband balanced behavior
Author :
Viallon, C. ; Venturin, D. ; Graffeuil, J. ; Parra, T.
Author_Institution :
Lab. of Anal. & Archit. of Syst., Paul Sabatier Univ., Toulouse, France
Volume :
15
Issue :
4
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
280
Lastpage :
282
Abstract :
This letter deals with the design of an active balun exhibiting a single-ended input and balanced outputs. We propose an original method, based on the determination of specific impedance for connecting the differential transistor pair to ground, which greatly improves the balanced behavior over a broadband frequency range. The usefulness of this method is demonstrated through a 180/spl deg/ power divider implemented on a 0.25-μm SiGe BiCMOS process. According to simulations, measurements confirm a broadband well balanced behavior, since the power splitter exhibits phase and amplitude errors between the two channels less than 4/spl deg/ and 0.5dB, respectively, from 0.2 to 22 GHz. These errors are only 0.75/spl deg//0.03 dB in a 2-GHz span around 20 GHz, in accordance with our optimization goals.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; differential amplifiers; power dividers; 0.2 to 22 GHz; 0.25 micron; BiCMOS process; K-band; SiGe; active balun; active coupler; amplitude error; broadband balanced behavior; broadband frequency range; common mode rejection ratio; differential amplifier; differential transistor; phase error; power divider; power splitter; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Impedance matching; Joining processes; K-band; Phase measurement; Power dividers; Power measurement; Silicon germanium; Active coupler; balun; common mode rejection ratio; differential amplifier;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2005.845749
Filename :
1416954
Link To Document :
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