Barium Hexaferrite Thick Films Made by Liquid Phase Epitaxy Reflow Method

Author

Kranov, Yanko A. ; Abuzir, Allaedeen ; Prakash, Tejashvi ; McIlroy, David N. ; Yeh, Wei J.

Author_Institution

Mater. Sci. & Eng., Idaho Univ., Moscow, ID

Volume

42

Issue

10

fYear

2006

Firstpage

3338

Lastpage

3340

Abstract

In this paper, we report on the growth of BaFe₁₂O₁₉ (BaM) thick films on sapphire Al₂O₃ (0001) substrate. Our goal is to fabricate barium ferrite thick films which can be self-biased for circulator applications. We have modified the liquid phase epitaxy (LPE) method by conducting the experiment in vacuum. A small piece of the melt weighing approximately 0.035 g was placed on 1times1 cm Al₂O₃ substrate and remelted at 1200degC for 1 h. The thickness of our thick films grown by this reflow method range from 300 to 550 mum. The coercivities of the thick films in the perpendicular direction were about 100 Oe

Keywords

barium compounds; ferrites; liquid phase epitaxial growth; magnetic thin films; sapphire; 1 cm; 1 h; 1200 C; 300 to 550 micron; BaFeO-Al₂O₃; barium hexaferrite thick films; liquid phase epitaxy reflow method; sapphire substrate; Barium; Coercive force; Epitaxial growth; Ferrite films; Iron; Magnetic films; Microwave devices; Sputtering; Substrates; Thick films; BaFe; hexaferrite; liquid phase epitaxy (LPE) method; reflow;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.879629

Filename

1704619