Title :
Barium Hexaferrite Thick Films Made by Liquid Phase Epitaxy Reflow Method
Author :
Kranov, Yanko A. ; Abuzir, Allaedeen ; Prakash, Tejashvi ; McIlroy, David N. ; Yeh, Wei J.
Author_Institution :
Mater. Sci. & Eng., Idaho Univ., Moscow, ID
Abstract :
In this paper, we report on the growth of BaFe12O19 (BaM) thick films on sapphire Al2 O3 (0001) substrate. Our goal is to fabricate barium ferrite thick films which can be self-biased for circulator applications. We have modified the liquid phase epitaxy (LPE) method by conducting the experiment in vacuum. A small piece of the melt weighing approximately 0.035 g was placed on 1times1 cm Al2O3 substrate and remelted at 1200degC for 1 h. The thickness of our thick films grown by this reflow method range from 300 to 550 mum. The coercivities of the thick films in the perpendicular direction were about 100 Oe
Keywords :
barium compounds; ferrites; liquid phase epitaxial growth; magnetic thin films; sapphire; 1 cm; 1 h; 1200 C; 300 to 550 micron; BaFeO-Al2O3; barium hexaferrite thick films; liquid phase epitaxy reflow method; sapphire substrate; Barium; Coercive force; Epitaxial growth; Ferrite films; Iron; Magnetic films; Microwave devices; Sputtering; Substrates; Thick films; BaFe; hexaferrite; liquid phase epitaxy (LPE) method; reflow;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.879629
