Title :
Highly efficient femtosecond Yb:KYW laser pumped by single narrow-stripe laser diode
Author :
Lagatsky, A.A. ; Rafailov, E.U. ; Leburn, C.G. ; Brown, C.T.A. ; Xiang, N. ; Okhotnikov, O.G. ; Sibbett, W.
Author_Institution :
Sch. of Phys. & Astron., Univ. of St. Andrews, UK
fDate :
7/24/2003 12:00:00 AM
Abstract :
A highly efficient and low threshold passively modelocked femtosecond Yb:KYW laser pumped by an InGaAs narrow-stripe laser diode is demonstrated. Near-transform limited pulses of 123 fs at 1047 nm were produced at an average modelocked power of 107 mW for only 308 mW of incident pump power. An optical-to-optical conversion efficiency of 35% was achieved and the corresponding electrical-to-optical efficiency exceeded 14%.
Keywords :
laser mode locking; optical pumping; potassium compounds; semiconductor lasers; solid lasers; ytterbium; yttrium compounds; 1047 nm; 107 mW; 123 fs; 14 percent; 308 mW; 35 percent; InGaAs; InGaAs laser diode; KY(WO4)2:Yb; Yb-doped material; highly efficient femtosecond laser; laser diode pump; low threshold laser; near-transform limited pulses; passively modelocked laser; single narrow-stripe LD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030735
