Title :
The (220) lattice spacing of silicon
Author :
Basile, Giuseppe ; Bergamin, Angelo ; Cavagnero, Giovanni ; Mana, Giovanni ; Vittone, Ettore ; Zosi, Gianfranco
Author_Institution :
Istituto di Metrol., Torino Univ., Italy
fDate :
4/1/1995 12:00:00 AM
Abstract :
Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5×10-9 d220 was achieved and the silicon d220 was determined to 3×10 -8 d220 accuracy. The measured value is d220 =(192015.551±0.005) fm. After correction for the impurity-induced lattice strain, d220=(192015.569±0.006) fm was obtained
Keywords :
X-ray applications; crystal structure; data analysis; error analysis; lattice constants; light interferometry; silicon; (220) lattice spacing; X-ray interferometry; correction; data analysis; impurity-induced lattice strain; measurement error analysis; optical interferometry; Error correction; Lattices; Motion measurement; Optical feedback; Optical interferometry; Optical modulation; Optical polarization; Optical recording; Silicon; Time measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
