Title :
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition
Author :
Tatebayashi, J. ; Hatori, N. ; Kakuma, H. ; Ebe, H. ; Sudo, H. ; Kuramata, A. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Nanoelectronics Collaborative Res. Center, Univ. of Tokyo, Japan
fDate :
7/24/2003 12:00:00 AM
Abstract :
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers grown by metal organic chemical vapour deposition is reported. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) was achieved at the wavelength of 1.18 μm. The threshold current of 6.7 mA is the lowest value so far achieved in quantum dot lasers grown by metal organic chemical vapour deposition. Comparison with photoluminescence spectra indicates that the observed lasing originates from the ground state of InAs quantum dots.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; ground states; indium compounds; photoluminescence; quantum dot lasers; self-assembly; semiconductor quantum dots; 1.18 micron; 6.7 mA; InAs quantum dot ground state; InAs-GaAs; continuous-wave lasing; low threshold current operation; metal organic chemical vapour deposition; photoluminescence spectra; room temperature; self-assembled InAs/GaAs quantum dot lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030750
