DocumentCode :
767670
Title :
1.5 to 0.87 μm optical upconversion device fabricated by wafer fusion
Author :
Ban, D. ; Luo, H. ; Liu, H.C. ; SpringThorpe, A.J. ; Glew, R. ; Wasilewski, Z.R. ; Buchanan, M.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
Volume :
39
Issue :
15
fYear :
2003
fDate :
7/24/2003 12:00:00 AM
Firstpage :
1145
Lastpage :
1147
Abstract :
A 1.5 to 0.87 μm wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical frequency conversion; p-i-n photodiodes; photodetectors; 1.5 to 0.87 micron; 18 percent; In0.53Ga0.47As-InP; In0.53Ga0.47As/InP; internal upconversion quantum efficiency; light emitting diode; optical upconversion device; pin photodetector; wafer fusion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030732
Filename :
1222698
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=767670
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