• DocumentCode
    767700
  • Title

    Inside view of substrate engineering and its future

  • Author

    Todi, R.M. ; Sood, S.

  • Volume
    26
  • Issue
    1
  • fYear
    2007
  • Firstpage
    36
  • Lastpage
    39
  • Abstract
    SOI is a substrate engineered by placing a thin insulating layer, such as silicon oxide or glass, between a thin layer of silicon and the silicon substrate. By offering an opportunity to deliver higher speed and also lowering power consumption, SOI has extended the track for the industry to keep chasing Moore´s law. In this article, we attempt to present the current status and future perspectives of SOI technology
  • Keywords
    power consumption; semiconductor technology; silicon-on-insulator; substrates; Moore´s law; SOI; power consumption; silicon on insulator; substrate; thin insulating layer; Charge carriers; Hydrogen; Ion implantation; MOSFETs; Manufacturing; Parasitic capacitance; Silicon; Stacking; Substrates; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Potentials, IEEE
  • Publisher
    ieee
  • ISSN
    0278-6648
  • Type

    jour

  • DOI
    10.1109/MP.2007.343039
  • Filename
    4147711