DocumentCode :
767700
Title :
Inside view of substrate engineering and its future
Author :
Todi, R.M. ; Sood, S.
Volume :
26
Issue :
1
fYear :
2007
Firstpage :
36
Lastpage :
39
Abstract :
SOI is a substrate engineered by placing a thin insulating layer, such as silicon oxide or glass, between a thin layer of silicon and the silicon substrate. By offering an opportunity to deliver higher speed and also lowering power consumption, SOI has extended the track for the industry to keep chasing Moore´s law. In this article, we attempt to present the current status and future perspectives of SOI technology
Keywords :
power consumption; semiconductor technology; silicon-on-insulator; substrates; Moore´s law; SOI; power consumption; silicon on insulator; substrate; thin insulating layer; Charge carriers; Hydrogen; Ion implantation; MOSFETs; Manufacturing; Parasitic capacitance; Silicon; Stacking; Substrates; Wafer bonding;
fLanguage :
English
Journal_Title :
Potentials, IEEE
Publisher :
ieee
ISSN :
0278-6648
Type :
jour
DOI :
10.1109/MP.2007.343039
Filename :
4147711
Link To Document :
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