DocumentCode
767709
Title
Single layer phase-switched screen using double-diode switching elements
Author
Chambers, B. ; Tennant, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Volume
39
Issue
15
fYear
2003
fDate
7/24/2003 12:00:00 AM
Firstpage
1150
Lastpage
1152
Abstract
A new form of phase-switched screen is demonstrated in which each dipole element in the active layer is loaded by an antiparallel pair of pin diodes. The advantages of this arrangement are that the diode control voltage is of sine wave, rather than square wave form, the effective switching frequency is doubled, with a consequent improvement in scattered spectral characteristics and each pin diode is inherently protected against large peak inverse voltage burnout caused by abnormally large incident electromagnetic fields.
Keywords
electromagnetic shielding; electromagnetic wave absorption; microwave propagation; p-i-n diodes; antiparallel pair; diode control voltage; dipole element; double-diode switching elements; effective switching frequency; incident electromagnetic fields; microwave absorbent materials; peak inverse voltage burnout; pin diode; scattered spectral characteristics; sine wave form; single layer phase-switched screen;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030722
Filename
1222701
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