DocumentCode :
767709
Title :
Single layer phase-switched screen using double-diode switching elements
Author :
Chambers, B. ; Tennant, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Volume :
39
Issue :
15
fYear :
2003
fDate :
7/24/2003 12:00:00 AM
Firstpage :
1150
Lastpage :
1152
Abstract :
A new form of phase-switched screen is demonstrated in which each dipole element in the active layer is loaded by an antiparallel pair of pin diodes. The advantages of this arrangement are that the diode control voltage is of sine wave, rather than square wave form, the effective switching frequency is doubled, with a consequent improvement in scattered spectral characteristics and each pin diode is inherently protected against large peak inverse voltage burnout caused by abnormally large incident electromagnetic fields.
Keywords :
electromagnetic shielding; electromagnetic wave absorption; microwave propagation; p-i-n diodes; antiparallel pair; diode control voltage; dipole element; double-diode switching elements; effective switching frequency; incident electromagnetic fields; microwave absorbent materials; peak inverse voltage burnout; pin diode; scattered spectral characteristics; sine wave form; single layer phase-switched screen;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030722
Filename :
1222701
Link To Document :
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