Title :
30 nm self-aligned FinFET with large source/drain fan-out structure
Author :
Woo, Dong-Soo ; Choi, Byung Yong ; Choi, Woo Young ; Lee, Myeong Won ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea
fDate :
7/24/2003 12:00:00 AM
Abstract :
A 30 nm self-aligned FinFET with a large single-crystalline source/drain structure is proposed and has been fabricated. The fabricated FinFET shows large intrinsic transconductance of 1070 μS/μm at 0.8 V gate overdrive and good short channel behaviour in spite of thick gate oxide of 3.6 nm.
Keywords :
CMOS integrated circuits; MOSFET; SIMOX; 0.8 V; 3.6 nm; 30 nm; 30 nm self-aligned FinFET; CMOS dimensions; SIMOX wafer; gate overdrive; gate oxide thickness; intrinsic transconductance; large source/drain fan-out structure; short channel behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030656
