AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor deposition

Author

Hughes, N.A. ; Connolly, J.C. ; Gilbert, D.B. ; Murphy, K.B.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

4

Issue

2

fYear

1992

Firstpage

113

Lastpage

115

Abstract

AlInGaAs/AlGaAs strained quantum-well ridge waveguide diode lasers with an emission wavelength of 890 nm are presented. These devices exhibit both single spatial and longitudinal mode operation up to 30 mW of optical output power. A CW threshold current of 13 mA was obtained for a 5- mu m-wide ridge waveguide having a cavity length of 500 mu m. The differential quantum efficiency was 52%. The lateral and perpendicular far-field radiation patterns (FWHM) from the laser were 6 degrees and 51 degrees , respectively. Reliability testing on uncoated gain-guided lasers made from the same wafer showed no sudden death failures and degradation rates as low as 4.6%/kh.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 13 mA; 30 mW; 5 micron; 500 micron; 52 percent; 890 nm; AlInGaAs-AlGaAs; CW threshold current; IR; cavity length; degradation rates; differential quantum efficiency; diode lasers; emission wavelength; far-field radiation patterns; longitudinal mode operation; metalorganic chemical vapor deposition; optical output power; reliability testing; ridge waveguide lasers; semiconductors; single spatial mode lasing; strained quantum-well; sudden death failures; uncoated gain-guided lasers; Diode lasers; Laser modes; Optical devices; Optical waveguides; Power generation; Quantum well lasers; Stimulated emission; Testing; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122331

Filename

122331