DocumentCode :
76814
Title :
Cu/Low- k Interconnect Technology Design and Benchmarking for Future Technology Nodes
Author :
Ceyhan, Ahmet ; Naeemi, Azad
Author_Institution :
Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4041
Lastpage :
4047
Abstract :
This paper investigates the performances of conventional Cu/low- k multilevel interconnect networks (MINs) for FinFETs at the 20-, 16-, 14-, 10-, and 7-nm technology nodes corresponding to the even years between 2012 and 2020, respectively. This paper captures the impacts of interconnect variables, such as size effect parameters, barrier/liner bilayer thickness, and aspect ratio on the design and performance of the MIN of a logic core. The number of metal levels for a high-performance chip increases by as large as 34% due to size effects, and this value can go up to 76% considering issues in barrier/liner thickness scaling at the 7-nm technology node. At this node, increasing the aspect ratio of interconnects from two to three can improve wire delay and save two metal levels at the cost of 35% more power dissipation. A ±20% wire-width variation induces wire delay variations of -20% and 44% at minimum-width wires. Designing the MIN considering this variation increases the required wire area by 4% in the worst case.
Keywords :
MOSFET; interconnections; semiconductor device models; semiconductor device testing; FinFET; barrier/liner bilayer thickness; benchmarking; logic core; multilevel interconnect networks; power dissipation; size 10 nm; size 14 nm; size 16 nm; size 20 nm; size 7 nm; time 2012 year to 2020 year; Capacitance; Delays; Integrated circuit interconnections; Logic gates; Metals; Resistance; Wires; FinFET; high-performance computing; interconnections; multilevel systems; wire-length distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2286176
Filename :
6651772
Link To Document :
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