Title :
The frequency behavior of InGaAs-AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applications
Author :
Burroughes, J.H. ; Milshtein, M.S. ; Pettit, G.D. ; Pakdaman, N. ; Heinrich, H. ; Woodall, J.M.
Author_Institution :
Toshiba Cambrdige Res. Centre, UK
Abstract :
The authors have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. It is demonstrated that multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are viable candidates for long-wavelength data communication applications.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; 1.0 to 1.6 micron; 95 percent; III-V semiconductors; InGaAs-AlInAs; InGaAs-AlInAs metal-semiconductor-metal photodetectors; InP; data communication applications; frequency behavior; frequency domain; internal collection efficiency; logic-level bias voltages; long-wavelength data communication; low bias voltages; low capacitance; multigigahertz bandwidths; responsivity; very low dark currents; Bandwidth; Capacitance; Dark current; Detectors; Frequency domain analysis; Frequency measurement; Indium gallium arsenide; Indium phosphide; Lattices; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
