Development of ultra-compact plastic-packaged high-isolation GaAs SPDT switch

Author

Uda, Hisanori ; Hirai, Toshikazu ; Tominaga, Hisaaki ; Nogawa, Kaoru ; Sawai, Tetsuro ; Higashino, Takayoshi ; Harada, Yasoo

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

19

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

182

Lastpage

187

Abstract

A high-isolation switch IC with 31 dB isolation and 0.88 dB insertion loss at 1.65 GHz, sealed in a six-pin ultra-compact plastic package with approximately 1/4 of the conventional area, was developed for the first time. Analysis using electromagnetic-field simulation of the isolation characteristics between lead pins of the ultra-compact package and a new design method (which takes into account deterioration of the isolation characteristics due to the plastic molding) were used for this IC. Layout design using electromagnetic-field simulation also attempted to minimize chip size

Keywords

III-V semiconductors; MESFET integrated circuits; circuit analysis computing; circuit layout CAD; field effect transistor switches; gallium arsenide; integrated circuit layout; integrated circuit packaging; integrated circuit technology; isolation technology; plastic packaging; 0.88 dB; 1.65 GHz; GaAs; MESFET switch IC; chip size; electromagnetic-field simulation; high-isolation SPDT switch; insertion loss; isolation characteristics; layout design; plastic molding; six-pin ultra-compact plastic package; Circuit simulation; Gallium arsenide; Insertion loss; Integrated circuit packaging; MESFET integrated circuits; Pins; Plastic integrated circuit packaging; Switches; Switching circuits; Synthesizers;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1070-9894

Type

jour

DOI

10.1109/96.486501

Filename

486501