Title :
Development of ultra-compact plastic-packaged high-isolation GaAs SPDT switch
Author :
Uda, Hisanori ; Hirai, Toshikazu ; Tominaga, Hisaaki ; Nogawa, Kaoru ; Sawai, Tetsuro ; Higashino, Takayoshi ; Harada, Yasoo
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
2/1/1996 12:00:00 AM
Abstract :
A high-isolation switch IC with 31 dB isolation and 0.88 dB insertion loss at 1.65 GHz, sealed in a six-pin ultra-compact plastic package with approximately 1/4 of the conventional area, was developed for the first time. Analysis using electromagnetic-field simulation of the isolation characteristics between lead pins of the ultra-compact package and a new design method (which takes into account deterioration of the isolation characteristics due to the plastic molding) were used for this IC. Layout design using electromagnetic-field simulation also attempted to minimize chip size
Keywords :
III-V semiconductors; MESFET integrated circuits; circuit analysis computing; circuit layout CAD; field effect transistor switches; gallium arsenide; integrated circuit layout; integrated circuit packaging; integrated circuit technology; isolation technology; plastic packaging; 0.88 dB; 1.65 GHz; GaAs; MESFET switch IC; chip size; electromagnetic-field simulation; high-isolation SPDT switch; insertion loss; isolation characteristics; layout design; plastic molding; six-pin ultra-compact plastic package; Circuit simulation; Gallium arsenide; Insertion loss; Integrated circuit packaging; MESFET integrated circuits; Pins; Plastic integrated circuit packaging; Switches; Switching circuits; Synthesizers;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on
