Title :
Spin dependent recombination: a 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface
Author :
Jupina, M.A. ; Lenahan, P.M.
Author_Institution :
Pennsylvania State Univ., Philadelphia, PA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The spin-dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. The SDR results show that the 29 Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect´s local geometry lead to substantial differences in the defect´s energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage
Keywords :
crystal hyperfine field interactions; elemental semiconductors; gamma-ray effects; insulated gate field effect transistors; interface electron states; paramagnetic resonance of defects; semiconductor-insulator boundaries; silicon; silicon compounds; surface potential; 29Si hyperfine spectra; ESR; MOSFET; Si-SiO2 interface; atomic scale information; defect local geometry; energy level; gamma irradiation; ionizing radiation dosage; paramagnetic trivalent defects; radiation-induced Pb centers; radiation-induced interface state; spin-dependent recombination; surface potential; Atomic measurements; Bonding; Capacitive sensors; Electrons; Energy states; Extraterrestrial measurements; Interface states; Paramagnetic materials; Paramagnetic resonance; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
