Title :
Modeling the anneal of radiation-induced trapped holes in a varying thermal environment
Author :
McWhorter, P.J. ; Miller, S.L. ; Miller, W.M.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The anneal of radiation-induced trapped holes in MOS transistors is found to be thermally activated. A quantitative, physical model based on thermal emission and tunneling is developed. It accurately predicts the anneal of radiation-induced trapped holes in constant or time-varying thermal environments. Data are presented which quantitatively verify the accuracy of the model for temperatures between 25 and 160°C. This model provides the basis for developing accurate quantitative screens for the rebound failure mechanism
Keywords :
annealing; hole traps; insulated gate field effect transistors; interface electron states; radiation effects; semiconductor device models; 25 to 160 degC; MOS transistors; anneal modelling; physical model; radiation-induced trapped holes; rebound failure mechanism; thermal emission; thermally activated anneal; tunneling; varying thermal environment; Annealing; Application specific integrated circuits; Failure analysis; MOS devices; MOSFETs; Predictive models; Silicon; Temperature distribution; Threshold voltage; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
