Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

Author

McWhorter, P.J. ; Miller, S.L. ; Miller, W.M.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1682

Lastpage

1689

Abstract

The anneal of radiation-induced trapped holes in MOS transistors is found to be thermally activated. A quantitative, physical model based on thermal emission and tunneling is developed. It accurately predicts the anneal of radiation-induced trapped holes in constant or time-varying thermal environments. Data are presented which quantitatively verify the accuracy of the model for temperatures between 25 and 160°C. This model provides the basis for developing accurate quantitative screens for the rebound failure mechanism

Keywords

annealing; hole traps; insulated gate field effect transistors; interface electron states; radiation effects; semiconductor device models; 25 to 160 degC; MOS transistors; anneal modelling; physical model; radiation-induced trapped holes; rebound failure mechanism; thermal emission; thermally activated anneal; tunneling; varying thermal environment; Annealing; Application specific integrated circuits; Failure analysis; MOS devices; MOSFETs; Predictive models; Silicon; Temperature distribution; Threshold voltage; Tunneling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101177

Filename

101177