Title :
An improved displacement damage monitor LED
Author :
Barry, A.L. ; Maxseiner, R. ; Wojcik, R. ; Briere, M.A. ; Braunig, D.
Author_Institution :
Commun. Res. Centre, Ottawa, Ont., Canada
fDate :
12/1/1990 12:00:00 AM
Abstract :
A frequency-domain technique for measuring carrier lifetime in GaAs light-emitting-diode (LED) displacement damage monitors capable of high sensitivity and repeatability is developed. Applications of this technique that take advantage of the high sensitivity of this method, including the measurement of the threshold energy for lattice displacement in GaAs, are described. The measured minimum electron energy for displacement damage was 270±15 keV, corresponding to a threshold atomic displacement energy of 10.0±0.7 eV, assuming the defect is a displaced arsenic atom
Keywords :
III-V semiconductors; carrier lifetime; electron beam effects; frequency response; gallium arsenide; gamma-ray effects; light emitting diodes; monitoring; 10 eV; 270 keV; GaAs; LED; carrier lifetime; displaced As atom; displacement damage monitor; frequency response; frequency-domain technique; gamma irradiation; high sensitivity; lattice displacement; minimum electron energy; repeatability; threshold atomic displacement energy; threshold energy; Atomic measurements; Charge carrier lifetime; Displacement measurement; Electrons; Energy measurement; Frequency measurement; Gallium arsenide; Lattices; Light emitting diodes; Monitoring;
Journal_Title :
Nuclear Science, IEEE Transactions on
