Title :
Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation
Author :
Leone, Anthony ; Trione, Ann Marie ; Junga, Frank
Author_Institution :
Lockhead Missiles & Space Co. Inc., Palo Alto, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed
Keywords :
electrical conductivity transitions; interstitials; light transmission; proton effects; vacancies (crystal); vanadium compounds; V2O3; VO2; damage models; electrical switching properties; hysteresis width; infrared switching properties; infrared transmissivity; interstitials; long-term space missions; proton irradiation; semiconductor phase resistivity; transition temperature; vacancies; Coatings; Conductivity; Electric resistance; Hysteresis; Oxidation; Protons; Semiconductivity; Semiconductor films; Substrates; Temperature measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
