Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

Author

Leone, Anthony ; Trione, Ann Marie ; Junga, Frank

Author_Institution

Lockhead Missiles & Space Co. Inc., Palo Alto, CA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1739

Lastpage

1743

Abstract

The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed

Keywords

electrical conductivity transitions; interstitials; light transmission; proton effects; vacancies (crystal); vanadium compounds; V₂O₃; VO₂; damage models; electrical switching properties; hysteresis width; infrared switching properties; infrared transmissivity; interstitials; long-term space missions; proton irradiation; semiconductor phase resistivity; transition temperature; vacancies; Coatings; Conductivity; Electric resistance; Hysteresis; Oxidation; Protons; Semiconductivity; Semiconductor films; Substrates; Temperature measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101185

Filename

101185