Transient radiation effects in CMOS structures related to geometrical dimensions and nuclear radiation pulse forms

Author

Sigfridsson, B. ; Göransson, Gunnar ; Pettersson, Häkan

Author_Institution

Nat. Defence Res. Establ., Linkoping, Sweden

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1744

Lastpage

1750

Abstract

Theoretical and experimental investigations and SPICE simulations of transient radiation effects in CMOS structures are described. The effects of thin wells and substrates on photocurrents are treated theoretically and verified experimentally. The irradiation experiments were carried out using a pulsed 4-MeV electron accelerator. In addition circuit parameters are measured using electrical methods. The results indicate that the dimensions of the structure have a significant influence on the shape of generated photocurrent pulses. An application to compound nuclear radiation pulses, simulating a realistic nuclear event, shows that latchup turn-on is correlated with the leading edge of the radiation pulse, while the appearance of a long tail on the photocurrent pulse may influence the upset behavior of a circuit

Keywords

CMOS integrated circuits; circuit analysis computing; electromagnetic pulse; electron beam effects; integrated circuit testing; transients; 4 MeV; CMOS structures; SPICE simulations; circuit parameters; electron irradiation; geometrical dimensions; latchup turn-on; nuclear radiation pulse forms; photocurrent pulse; photocurrents; pulsed electron accelerator; substrates; thin wells; transient radiation effects; upset behavior; Circuit simulation; Electric variables measurement; Electron accelerators; Nuclear power generation; Photoconductivity; Pulse circuits; Pulse generation; Radiation effects; SPICE; Shape;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101186

Filename

101186