Simulation fidelity issues when using gamma-ray simulators for TREE testing CMOS SRAM

Author

Hartman, E.F. ; Browning, J.S. ; Drumm, C.R.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1756

Lastpage

1761

Abstract

Factors that influence the fidelity of gamma-ray TREE testing are investigated. Specifically, package-induced dose enhancement in 256K CMOS static-random-access-memories (SRAMs) and dose enhancement from finite-range electrons produced (by gamma-ray interactions) in materials external to the SRAM packages are studied. Two gamma-ray simulators with significantly different spectra are used in the studies. The spectral differences produced less change in SRAM upset levels than did surrounding materials of equal mass density but differing atomic number. The implication for gamma-ray simulation testing is that individual devices within electronic systems may respond quite differently in gamma-ray TREE testing because of the structural materials within the system than when tests are performed on these individual devices without the system present

Keywords

CMOS integrated circuits; SRAM chips; electron beam effects; gamma-ray effects; integrated circuit testing; packaging; 256 kbit; CMOS SRAM; SRAM upset levels; TREE testing; finite-range electrons; gamma-ray simulators; package-induced dose enhancement; simulation fidelity; structural materials; Building materials; Electromagnetic scattering; Electron emission; Electronic equipment testing; Electronics packaging; Laboratories; Materials testing; Packaging machines; Random access memory; System testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101188

Filename

101188