DocumentCode :
768649
Title :
Implementing QML for radiation hardness assurance
Author :
Winokur, P.S. ; Sexton, F.W. ; Fleetwood, D.M. ; Terry, M.D. ; Shaneyfelt, M.R. ; Dressendorfer, P.V. ; Schwank, J.R.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Volume :
37
Issue :
6
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
1794
Lastpage :
1805
Abstract :
The US government has proposed a qualified manufacturers list (QML) methodology to qualify integrated circuits for high reliability and radiation hardness. An approach to implementing QML for single-event upset (SEU) immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates is demonstrated. It is seen that the process capability indices, Cp and C pk, for the manufacture of 400-kΩ feedback resistors required to provide SEU tolerance do not conform to 6σ quality standards. For total-dose, interface trap charge, ΔV it, shifts measured on transistors are correlated with circuit response in the space environment. Statistical process control (SPC) is illustrated for ΔVit, and violations of SPC rules are interpreted in terms of continuous improvement. Design validation for SEU and quality conformance inspections for total-dose are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, 3-D device-plus-circuit codes, and improved design simulators
Keywords :
CMOS integrated circuits; circuit reliability; inspection; integrated circuit testing; quality control; radiation hardening (electronics); statistical process control; 16 kbit; 3D device-plus-circuit codes; CMOS circuits; QML methodology; SEV immunity; SPC; SRAMs; circuit response; design simulators; feedback resistance; feedback resistors; high reliability; integrated circuits; interface trap charge; physical models; process capability indices; qualified manufacturers list; quality conformance inspections; quality standards; radiation hardness assurance; single-event upset; space environment; system error rates; Charge measurement; Current measurement; Error analysis; Feedback; Integrated circuit manufacture; Integrated circuit reliability; Manufacturing processes; Resistors; Single event upset; US Government;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.101193
Filename :
101193
Link To Document :
بازگشت