Title :
Predicting switched-bias response from steady-state irradiations MOS transistors
Author :
Fleetwood, D.M. ; Winokur, P.S. ; Riewe, L.C.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A novel semiempirical model of radiation-induced charge neutralization is presented. This model is combined with 12 heuristic guidelines derived from studies of oxide- and interface-trap charge (ΔVot and ΔVit) buildup and annealing to develop a method to predict MOS switched-bias response from steady-state irradiations, with no free parameters. For n-channel MOS devices, predictions of ΔVot, ΔVit, and mobility degradation differ from experimental values through irradiation by less than 30% in all cases considered. This is demonstrated for gate oxides with widely varying ΔVot and ΔVit and for parasitic field oxides. Preliminary results suggest that n-channel MOS ΔVot annealing and ΔVit buildup following switched-bias irradiation and through switched-bias annealing also may be predicted with less than 30% error. The p-channel MOS response at high frequencies (>1 kHz) is more difficult to predict
Keywords :
X-ray effects; carrier mobility; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device models; MOS transistors; MOST; X-ray irradiation; annealing; gate oxides; interface-trap charge; mobility degradation; n-channel MOS devices; oxide-trap charge buildup; p-channel MOS response; parasitic field oxides; radiation-induced charge neutralization; semiempirical model; steady-state irradiations; switched-bias response; trapped holes; Annealing; Circuit testing; Electron traps; Guidelines; Laboratories; MOS devices; MOSFETs; Predictive models; Steady-state; Switching circuits;
Journal_Title :
Nuclear Science, IEEE Transactions on
