SEU and latchup tolerant advanced CMOS technology

Author

Koga, R. ; Crawford, K.B. ; Hansel, S.J. ; Johnson, B.M. ; Lau, D.D. ; Penzin, S.H. ; Pinkerton, S.D. ; Maher, M.C.

Author_Institution

Aerosp. Corp., El Segundo, CA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1869

Lastpage

1875

Abstract

Selected microcircuits constructed in National Semiconductor´s FACT (Fairchild advanced CMOS technology) were tested for heavy-ion-induced single event upset (SEU) and latchup. The devices showed no signs of heavy-ion-induced latchup for linear energy transfer (LET) values up to 120 MeV/(mg/cm²). SEU LET thresholds varied within a rather narrow range of 40 to 60 MeV/(mg/cm²). The test results suggest that FACT devices will exhibit higher tolerances to the cosmic ray environment than functionally similar microcircuits fabricated in HC/HCT (high-speed CMOS), ALS (advanced low-power Schottky), and LS (low-power Schottky) technologies

Keywords

CMOS integrated circuits; integrated circuit technology; integrated circuit testing; ion beam effects; 120 MeV; 40 to 60 MeV; CMOS technology; Fairchild advanced CMOS technology; LET thresholds; National Semiconductor FACT; SEU tolerance; cosmic ray environment; heavy-ion-induced single event upset; latchup tolerance; linear energy transfer; microcircuit testing; CMOS logic circuits; CMOS technology; Epitaxial layers; Logic devices; Logic testing; MOSFETs; Plasma temperature; Semiconductor device testing; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101203

Filename

101203